STD1NK60-1

Symbol Micros: TSTD1NK60-1

120654

TSTD1NK60-1

Contractor Symbol:

Case : TO262 (I2PAK)

Datasheet

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Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube

Parameters

Open channel resistance:	8,5Ohm
Max. drain current:	1A
Max. power loss:	30W
Case:	TO262 (I2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

All parameters

Manufacturer:: ST Manufacturer part number: STD1NK60-1 RoHS Case style: TO262 (I2PAK) Datasheet

In stock:

30 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4197	0,2736	0,1966	0,1720	0,1611

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	8,5Ohm
Max. drain current:	1A
Max. power loss:	30W
Case:	TO262 (I2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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