STD1NK60-1

Symbol Micros: TSTD1NK60-1
Contractor Symbol:
Case : TO262 (I2PAK)
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube
Parameters
Open channel resistance: 8,5Ohm
Max. drain current: 1A
Max. power loss: 30W
Case: TO262 (I2PAK)
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Manufacturer:: ST Manufacturer part number: STD1NK60-1 RoHS Case style: TO262 (I2PAK) Datasheet
In stock:
40 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,4177 0,2723 0,1957 0,1712 0,1604
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Packaging:
50
Open channel resistance: 8,5Ohm
Max. drain current: 1A
Max. power loss: 30W
Case: TO262 (I2PAK)
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT