STD35NF06LT4 STMicroelectronics

Symbol Micros: TSTD35nf06lt4

116210

TSTD35nf06lt4

Contractor Symbol:

Case : DPAK

Datasheet

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N-MOSFET 60V 35A 80W 17mΩ

Parameters

Open channel resistance:	20mOhm
Max. drain current:	35A
Max. power loss:	80W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

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• Parameters

Open channel resistance:	20mOhm
Max. drain current:	35A
Max. power loss:	80W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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