STD35P6LLF6

Symbol Micros: TSTD35p6llf6

128125

TSTD35p6llf6

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 36mOhm; 35A; 70W; -55°C ~ 175°C;

Parameters

Open channel resistance:	36mOhm
Max. drain current:	35A
Max. power loss:	70W
Case:	TO252 (DPAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: ST Manufacturer part number: STD35P6LLF6 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,1675	0,8910	0,7380	0,6466	0,6146

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	36mOhm
Max. drain current:	35A
Max. power loss:	70W
Case:	TO252 (DPAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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