STD3NK80Z-1

Symbol Micros: TSTD3NK80z1

100870

TSTD3NK80z1

Contractor Symbol:

Case : IPAK

Datasheet

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Transistor N-MOSFET; 800V; 800V; 30V; 4,5Ohm; 2,5A; 70W; -55°C ~ 150°C;

Parameters

Open channel resistance:	4,5Ohm
Max. power loss:	70W
Max. drain current:	2,5A
Case:	IPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. drain-gate voltage:	800V

All parameters

Manufacturer:: ST Manufacturer part number: STD3NK80Z-1 RoHS Case style: IPAK Datasheet

In stock:

141 pcs.

Quantity of pcs.	1+	5+	20+	75+	300+
Net price (EUR)	0,9613	0,6370	0,5250	0,4783	0,4573

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Packaging:
75 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,5Ohm
Max. power loss:	70W
Max. drain current:	2,5A
Case:	IPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. drain-gate voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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