STD4NK60ZT4 D-PAK

Symbol Micros: TSTD4NK60zt4

52971

TSTD4NK60zt4

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-Channel Power Mosfet smd 4A 600V RDS=2,0

Parameters

Open channel resistance:	2Ohm
Max. drain current:	4A
Max. power loss:	70W
Case:	TO252 (DPACK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ST Manufacturer part number: STD4NK60ZT4 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

300 pcs.

Quantity of pcs.	2+	10+	50+	300+	900+
Net price (EUR)	0,6855	0,4339	0,3416	0,3070	0,2977

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Packaging:
300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2Ohm
Max. drain current:	4A
Max. power loss:	70W
Case:	TO252 (DPACK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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