STD5NM60T4

Symbol Micros: TSTD5NM60t4

103181

TSTD5NM60t4

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 5A; 96W; -55°C ~ 150°C;

Parameters

Open channel resistance:	1Ohm
Max. drain current:	5A
Max. power loss:	96W
Case:	TO252 (DPACK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ST Manufacturer part number: STD5NM60T4 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

85 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,0232	0,6798	0,5638	0,5081	0,4872

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1Ohm
Max. drain current:	5A
Max. power loss:	96W
Case:	TO252 (DPACK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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