STD6N60M2 STMicroelectronics

Symbol Micros: TSTD6N60m2

108528

TSTD6N60m2

Contractor Symbol:

Case : DPAK

Datasheet

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N-MOSFET 600V 4.5A 1.2Ω 60W

Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	4,5A
Max. power loss:	60W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	4,5A
Max. power loss:	60W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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