STD8N80K5

Symbol Micros: TSTD8N80K5

132481

TSTD8N80K5

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-MOSFET 6A 800V 110W 0.95Ω

Parameters

Open channel resistance:	950mOhm
Max. drain current:	6A
Max. power loss:	110W
Case:	TO252 (DPACK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V

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• Parameters

Open channel resistance:	950mOhm
Max. drain current:	6A
Max. power loss:	110W
Case:	TO252 (DPACK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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