STF10NM60N

Symbol Micros: TSTF10NM60n

84690

TSTF10NM60n

Contractor Symbol:

Case : TO220iso

Datasheet

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N-MOSFET 10A 600V 25W 0.55Ω

Parameters

Open channel resistance:	550mOhm
Max. drain current:	10A
Max. power loss:	25W
Case:	TO220iso
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	25V

All parameters

Manufacturer:: ST Manufacturer part number: STF10NM60N RoHS Case style: TO220iso Datasheet

In stock:

195 pcs.

Quantity of pcs.	1+	5+	20+	50+	300+
Net price (EUR)	1,3357	0,9322	0,7907	0,7444	0,7026

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Packaging:
50/300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	550mOhm
Max. drain current:	10A
Max. power loss:	25W
Case:	TO220iso
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	25V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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