STF23NM60ND STM

Symbol Micros: TSTF23nm60nd

94052

TSTF23nm60nd

Contractor Symbol:

Case : TO220iso

Datasheet

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N-MOSFET 600V 19.5A 35W 180mΩ

Parameters

Open channel resistance:	180mOhm
Max. drain current:	19,5A
Max. power loss:	35W
Case:	TO220FP
Manufacturer:	ST
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	180mOhm
Max. drain current:	19,5A
Max. power loss:	35W
Case:	TO220FP
Manufacturer:	ST
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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