STGD3NB60SDT4 STMicroelectronics
Symbol Micros:
TSTGD3nb60sdt4
Case : DPAK
IGBT 600V 6A 48W
Parameters
| Gate charge: | 23nC |
| Max. dissipated power: | 48W |
| Max. collector current: | 6A |
| Max collector current (impulse): | 25A |
| Forvard volatge [Vgeth]: | 2,5V ~ 4,5V |
| Case: | DPAK |
| Manufacturer: | STMicroelectronics |
| Gate charge: | 23nC |
| Max. dissipated power: | 48W |
| Max. collector current: | 6A |
| Max collector current (impulse): | 25A |
| Forvard volatge [Vgeth]: | 2,5V ~ 4,5V |
| Case: | DPAK |
| Manufacturer: | STMicroelectronics |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -65°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | SMD |
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