STGD3NB60SDT4 STMicroelectronics

Symbol Micros: TSTGD3nb60sdt4

112953

TSTGD3nb60sdt4

Contractor Symbol:

Case : DPAK

Datasheet

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IGBT 600V 6A 48W

Parameters

Gate charge:	23nC
Max. dissipated power:	48W
Max collector current (impulse):	25A
Max. collector current:	6A
Forvard volatge [Vgeth]:	2,5V ~ 4,5V
Case:	DPAK
Manufacturer:	STMicroelectronics

All parameters

Manufacturer:: ST Manufacturer part number: STGD3NB60SD RoHS Case style: DPAK t/r Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2740	0,9708	0,8039	0,7052	0,6699

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Gate charge:	23nC
Max. dissipated power:	48W
Max collector current (impulse):	25A
Max. collector current:	6A
Forvard volatge [Vgeth]:	2,5V ~ 4,5V
Case:	DPAK
Manufacturer:	STMicroelectronics
Operating temperature (range):	-65°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	SMD

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