STGD5NB120SZT4 STMicroelectronics

Symbol Micros: TSTGD5nb120szt4
Contractor Symbol:
Case : DPAK
IGBT 1200V 10A 75W
Parameters
Max. dissipated power: 75W
Max. collector current: 10A
Max collector current (impulse): 10A
Forvard volatge [Vgeth]: 2,0V ~ 5,0V
Case: DPAK
Manufacturer: STMicroelectronics
Collector-emitter voltage: 1200V
         
 
Item available on request
Max. dissipated power: 75W
Max. collector current: 10A
Max collector current (impulse): 10A
Forvard volatge [Vgeth]: 2,0V ~ 5,0V
Case: DPAK
Manufacturer: STMicroelectronics
Collector-emitter voltage: 1200V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: SMD