STGD6NC60HDT4 STMicroelectronics

Symbol Micros: TSTGD6nc60hdt4
Contractor Symbol:
Case : DPAK
IGBT 600V 15A 56W
Parameters
Gate charge: 13,6nC
Max. dissipated power: 56W
Max collector current (impulse): 21A
Max. collector current: 15A
Forvard volatge [Vgeth]: 3,75V ~ 5,75V
Case: DPAK
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGD6NC60HDT4 RoHS Case style: DPAK t/r Datasheet
In stock:
8 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,3449 0,9424 0,8003 0,7317 0,7080
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Packaging:
100
Manufacturer:: ST Manufacturer part number: STGD6NC60HD RoHS Case style: DPAK t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,3449 0,9424 0,8003 0,7317 0,7080
Add to comparison tool
Packaging:
100
Manufacturer:: ST Manufacturer part number: STGD6NC60HDT4 Case style: DPAK  
External warehouse:
2210 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 0,7080
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Gate charge: 13,6nC
Max. dissipated power: 56W
Max collector current (impulse): 21A
Max. collector current: 15A
Forvard volatge [Vgeth]: 3,75V ~ 5,75V
Case: DPAK
Manufacturer: STMicroelectronics
Operating temperature (range): -55°C ~ 150°C
Collector-emitter voltage: 600V
Gate-emitter voltage: 20V
Mounting: SMD