STGD6NC60HDT4 STMicroelectronics

Symbol Micros: TSTGD6nc60hdt4

112958

TSTGD6nc60hdt4

Contractor Symbol:

Case : DPAK

Datasheet

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IGBT 600V 15A 56W

Parameters

Gate charge:	13,6nC
Max. dissipated power:	56W
Max collector current (impulse):	21A
Max. collector current:	15A
Forvard volatge [Vgeth]:	3,75V ~ 5,75V
Case:	DPAK
Manufacturer:	STMicroelectronics

All parameters

Manufacturer:: ST Manufacturer part number: STGD6NC60HD RoHS Case style: DPAK t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,3351	0,9355	0,7945	0,7263	0,7028

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: ST Manufacturer part number: STGD6NC60HDT4 RoHS Case style: DPAK t/r Datasheet

In stock:

28 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,3351	0,9355	0,7945	0,7263	0,7028

Add to comparison tool Add inquiry (RFQ)

Packaging:
100 Quantity (multiple: 1)

- +

• Parameters

Gate charge:	13,6nC
Max. dissipated power:	56W
Max collector current (impulse):	21A
Max. collector current:	15A
Forvard volatge [Vgeth]:	3,75V ~ 5,75V
Case:	DPAK
Manufacturer:	STMicroelectronics
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	SMD

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