STGF10NB60SD STMicroelectronics

Symbol Micros: TSTGF10nb60sd

113621

TSTGF10nb60sd

Contractor Symbol:

Case : TO220FP

Datasheet

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IGBT 600V 23A 25W

Parameters

Gate charge:	33nC
Max. dissipated power:	25W
Max collector current (impulse):	80A
Max. collector current:	23A
Forvard volatge [Vgeth]:	2,5V ~ 5,0V
Case:	TO220FP
Manufacturer:	STMicroelectronics

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• Parameters

Gate charge:	33nC
Max. dissipated power:	25W
Max collector current (impulse):	80A
Max. collector current:	23A
Forvard volatge [Vgeth]:	2,5V ~ 5,0V
Case:	TO220FP
Manufacturer:	STMicroelectronics
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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