STGP10NC60KD

Symbol Micros: TSTGP10nc60kd

133424

TSTGP10nc60kd

Contractor Symbol:

Case : TO220

Datasheet

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Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220

Parameters

Gate charge:	19nC
Max. dissipated power:	65W
Max collector current (impulse):	30A
Max. collector current:	20A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO220
Manufacturer:	STMicroelectronics

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Estimated date:
2026-01-31

Quantity of pcs.: 100

• Parameters

Gate charge:	19nC
Max. dissipated power:	65W
Max collector current (impulse):	30A
Max. collector current:	20A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO220
Manufacturer:	STMicroelectronics
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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