STGP10NC60KD

Symbol Micros: TSTGP10nc60kd
Contractor Symbol:
Case : TO220
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Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220
Parameters
Gate charge: 19nC
Max. dissipated power: 65W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: TO220
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGP10NC60KD RoHS Case style: TO220 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5778 1,2053 0,9971 0,8745 0,8305
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Packaging:
50
Gate charge: 19nC
Max. dissipated power: 65W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: TO220
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT

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