STGW35NB60SD

Symbol Micros: TSTGW35nb60sd

119760

TSTGW35nb60sd

Contractor Symbol:

Case : TO247

Datasheet

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70A; 600V; 200W; IGBT

Parameters

Gate charge:	115nC
Max. dissipated power:	200W
Max collector current (impulse):	250A
Max. collector current:	70A
Forvard volatge [Vgeth]:	2,5V ~ 5,0V
Case:	TO247
Manufacturer:	STMicroelectronics

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• Parameters

Gate charge:	115nC
Max. dissipated power:	200W
Max collector current (impulse):	250A
Max. collector current:	70A
Forvard volatge [Vgeth]:	2,5V ~ 5,0V
Case:	TO247
Manufacturer:	STMicroelectronics
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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