STGW40V60DF

Symbol Micros: TSTGW40v60df

133445

TSTGW40v60df

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 80A; 160A; 283W; 5V~7V; 226nC; -55°C~175°C;

Parameters

Gate charge:	226nC
Max. dissipated power:	283W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO247
Manufacturer:	ST

All parameters

Manufacturer:: ST Manufacturer part number: STGW40V60DF Case style: TO247  

External warehouse:

445 pcs.

Quantity of pcs.	150+ (Please wait for the order confirmation)
Net price (EUR)	0,8888

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Packaging:
30

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	226nC
Max. dissipated power:	283W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO247
Manufacturer:	ST
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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