STGWA60H65DFB STMicroelectronics

Symbol Micros: TSTGWA60h65dfb

102658

TSTGWA60h65dfb

Contractor Symbol:

Case : TO247

Datasheet

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Tranzystor IGBT ; 650V; 20V; 80A; 240A; 375W; 5V~7V; 306nC; -55°C~150°C;

Parameters

Gate charge:	306nC
Max. dissipated power:	375W
Max collector current (impulse):	240A
Max. collector current:	80A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO247
Manufacturer:	ST

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• Parameters

Gate charge:	306nC
Max. dissipated power:	375W
Max collector current (impulse):	240A
Max. collector current:	80A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO247
Manufacturer:	ST
Collector-emitter voltage:	650V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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