STN1HNK60

Symbol Micros: TSTN1HNK60

89041

TSTN1HNK60

Contractor Symbol:

Case : SOT223

Datasheet

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Trans MOSFET N-CH 600V 0.4A

Parameters

Open channel resistance:	8,5Ohm
Max. drain current:	400mA
Max. power loss:	3,3W
Case:	SOT223
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

All parameters

Manufacturer:: ST Manufacturer part number: STN1HNK60 RoHS Case style: SOT223t/r Datasheet

In stock:

250 pcs.

Quantity of pcs.	2+	10+	50+	300+	1200+
Net price (EUR)	0,4515	0,2751	0,2112	0,1874	0,1808

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Packaging:
300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	8,5Ohm
Max. drain current:	400mA
Max. power loss:	3,3W
Case:	SOT223
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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