|
Open channel resistance:
|
750mOhm |
|
Max. drain current:
|
10A |
|
Max. power loss:
|
35W |
|
Case:
|
TO220iso |
|
Manufacturer:
|
STMicroelectronics |
|
Max. drain-source voltage:
|
600V |
|
Transistor type:
|
N-MOSFET |
|
Max. gate-source Voltage:
|
30V |
|
Operating temperature (range):
|
-55°C ~ 150°C |
|
Mounting:
|
THT |
Detailed description
STP10NK60ZFP is a power MOSFET with an N-channel, designed for operation in high-voltage and heavy-load circuits. It features a maximum drain-source voltage of 600V and a maximum drain current of 10A. These parameters make it ideal for applications in switching power supplies, energy converters, and motor control systems.
The STP10NK60ZFP transistor utilizes SuperMESH™ technology, which ensures low on-state resistance (below 750mOhm), enhancing energy efficiency and reducing power losses. With built-in Zener-protected gate protection, the transistor is safeguarded against voltage spikes, and its high avalanche energy capacity and strong resistance to rapid voltage changes (dv/dt) make it a reliable solution even for the most demanding applications.
The STP10NK60ZFP operates within a wide temperature range from -55°C to +150°C, allowing its use in challenging industrial environments. The TO220iso package with thermal insulation ensures efficient heat dissipation and secure electrical insulation, simplifying assembly and improving safety.
