STP10NK80Z

Symbol Micros: TSTP10NK80Z

42860

TSTP10NK80Z

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 9A 800V 160W

Parameters

Open channel resistance:	900mOhm
Max. drain current:	9A
Max. power loss:	160W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. drain-gate voltage:	800V

All parameters

Manufacturer:: ST Manufacturer part number: STP10NK80Z RoHS Case style: TO220 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,3388	1,9616	1,7423	1,6079	1,5584

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	900mOhm
Max. drain current:	9A
Max. power loss:	160W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. drain-gate voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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