STP11NM60FD

Symbol Micros: TSTP11NM60FD

98453

TSTP11NM60FD

Contractor Symbol:

Case : TO220

Datasheet

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Tranzystor N-MOSFET; 600V; 600V; 30V; 450mOhm; 11A; 160W; -65°C ~ 150°C; YFW65R380AF; STP11NM60FD-VB;

Parameters

Open channel resistance:	450mOhm
Max. drain current:	11A
Max. power loss:	160W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

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Estimated date:
2026-12-31

Quantity of pcs.: 50

• Parameters

Open channel resistance:	450mOhm
Max. drain current:	11A
Max. power loss:	160W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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