STP11NM60FD

Symbol Micros: TSTP11NM60FD

98453

TSTP11NM60FD

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 600V 11A 450mOhm@5.5A,10V, 40nC@10V, 900pF@50V, 160W

Parameters

Open channel resistance:	450mOhm
Max. drain current:	11A
Max. power loss:	160W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

All parameters

Manufacturer:: ST Manufacturer part number: STP11NM60FD RoHS Case style: TO220 Datasheet

In stock:

4 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,5911	2,1219	1,8508	1,6810	1,6197

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: ST Manufacturer part number: STP11NM60FD Case style: TO220  

External warehouse:

20950 pcs.

Quantity of pcs.	100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,6197

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	450mOhm
Max. drain current:	11A
Max. power loss:	160W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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