STP11NM60FD

Symbol Micros: TSTP11NM60FD

98453

TSTP11NM60FD

Contractor Symbol:

Case : TO220

Datasheet

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Tranzystor N-MOSFET; 600V; 600V; 30V; 450mOhm; 11A; 160W; -65°C ~ 150°C; YFW65R380AF; STP11NM60FD-VB;

Parameters

Open channel resistance:	450mOhm
Max. drain current:	11A
Max. power loss:	160W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

All parameters

Manufacturer:: ST Manufacturer part number: STP11NM60FD RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,4438	2,0496	1,8216	1,6815	1,6292

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	450mOhm
Max. drain current:	11A
Max. power loss:	160W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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