STP11NM60ND

Symbol Micros: TSTP11NM60ND

98454

TSTP11NM60ND

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 600V 10A 450mOhm@5A,10V, 30nC@10V, 850pF@50V, 90W

Parameters

Open channel resistance:	450mOhm
Max. drain current:	10A
Max. power loss:	90W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Max. gate-source Voltage:	25V

All parameters

Manufacturer:: ST Manufacturer part number: STP11NM60ND Case style: TO220  

External warehouse:

30 pcs.

Quantity of pcs.	10+ (Please wait for the order confirmation)
Net price (EUR)	1,5211

Add to comparison tool Add inquiry (RFQ)

Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: ST Manufacturer part number: STP11NM60ND Case style: TO220  

External warehouse:

850 pcs.

Quantity of pcs.	150+ (Please wait for the order confirmation)
Net price (EUR)	1,1102

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	450mOhm
Max. drain current:	10A
Max. power loss:	90W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Max. gate-source Voltage:	25V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.