STP11NM80

Symbol Micros: TSTP11NM80
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Case : TO220
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N-MOSFET 11A 800V 150W
Parameters
Open channel resistance: 400mOhm
Max. drain current: 11A
Max. power loss: 150W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 400mOhm
Max. drain current: 11A
Max. power loss: 150W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -65°C ~ 150°C
Mounting: THT

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