STP11NM80

Symbol Micros: TSTP11NM80
Contractor Symbol:
Case : TO220
N-MOSFET 11A 800V 150W
Parameters
Open channel resistance: 400mOhm
Max. drain current: 11A
Max. power loss: 150W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STP11NM80 RoHS Case style: TO220 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 3,0713 2,6538 2,4085 2,2528 2,1938
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Packaging:
50
Manufacturer:: ST Manufacturer part number: STP11NM80 Case style: TO220  
External warehouse:
43250 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,1938
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STP11NM80 Case style: TO220  
External warehouse:
2750 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,1938
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STP11NM80 Case style: TO220  
External warehouse:
4670 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,1938
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 400mOhm
Max. drain current: 11A
Max. power loss: 150W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -65°C ~ 150°C
Mounting: THT