STP11NM80

Symbol Micros: TSTP11NM80

42865

TSTP11NM80

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 11A 800V 150W

Parameters

Open channel resistance:	400mOhm
Max. drain current:	11A
Max. power loss:	150W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ST Manufacturer part number: STP11NM80 RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	3,0923	2,6719	2,4249	2,2681	2,2088

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	400mOhm
Max. drain current:	11A
Max. power loss:	150W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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