STP11NM80

Symbol Micros: TSTP11NM80
Contractor Symbol:
Case : TO220
N-MOSFET 11A 800V 150W
Parameters
Open channel resistance: 400mOhm
Max. drain current: 11A
Max. power loss: 150W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Max. gate-source Voltage: 30V
Manufacturer:: ST Manufacturer part number: STP11NM80 RoHS Case style: TO220 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 3,0292 2,6174 2,3754 2,2219 2,1637
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Packaging:
50
Manufacturer:: ST Manufacturer part number: STP11NM80 Case style: TO220  
External warehouse:
1150 pcs.
Quantity of pcs. 100+ (Please wait for the order confirmation)
Net price (EUR) 2,1637
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 400mOhm
Max. drain current: 11A
Max. power loss: 150W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Max. gate-source Voltage: 30V
Transistor type: N-MOSFET
Operating temperature (range): -65°C ~ 150°C
Mounting: THT