STP18N60M2

Symbol Micros: TSTP18N60M2

168900

TSTP18N60M2

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 600V; 25V; 280mOhm; 13A; 110W; -55°C ~ 150°C; Equivalent: STP18N60M2-VB;

Parameters

Open channel resistance:	280mOhm
Max. drain current:	13A
Max. power loss:	110W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	25V

All parameters

Manufacturer:: ST Manufacturer part number: STP18N60M2 RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	50+	100+	300+
Net price (EUR)	1,8896	1,4001	1,1656	1,1383	1,1110

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	280mOhm
Max. drain current:	13A
Max. power loss:	110W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	25V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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