STP20NM60FD

Symbol Micros: TSTP20NM60FD

109159

TSTP20NM60FD

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Case : TO220

Datasheet

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N-MOSFET 20A 600V 192W 0.29Ω

Parameters

Open channel resistance:	290mOhm
Max. drain current:	20A
Max. power loss:	192W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

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• Parameters

Open channel resistance:	290mOhm
Max. drain current:	20A
Max. power loss:	192W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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