STP26NM60N

Symbol Micros: TSTP26NM60N

109424

TSTP26NM60N

Contractor Symbol:

Case : TO220

Datasheet

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Trans MOSFET N-CH 600V 20A

Parameters

Open channel resistance:	165mOhm
Max. drain current:	20A
Max. power loss:	140W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ST Manufacturer part number: STP26NM60N RoHS Case style: TO220 Datasheet

In stock:

18 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	3,1191	2,6959	2,4457	2,2864	2,2273

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	165mOhm
Max. drain current:	20A
Max. power loss:	140W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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