STP35NF10

Symbol Micros: TSTP35NF10

95359

TSTP35NF10

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N-MOSFET 40A 100V 115W 0.035Ω

Parameters

Open channel resistance:	35mOhm
Max. drain current:	40A
Max. power loss:	115W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V

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• Parameters

Open channel resistance:	35mOhm
Max. drain current:	40A
Max. power loss:	115W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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