STP5NK80Z

Symbol Micros: TSTP5NK80Z

42857

TSTP5NK80Z

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSEFT 4,3A 800V 30W

Parameters

Open channel resistance:	2,4Ohm
Max. drain current:	4,3A
Max. power loss:	110W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ST Manufacturer part number: STP5NK80Z RoHS Case style: TO220 Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,1148	0,8509	0,7053	0,6165	0,5870

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,4Ohm
Max. drain current:	4,3A
Max. power loss:	110W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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