STP60N043DM9 STMicroelectronics

Symbol Micros: TSTP60N043DM9

396048

TSTP60N043DM9

Contractor Symbol:

Case :  

Datasheet

Add to favourites

N-CHANNEL 600 V, 38 MOHM TYP., 5 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	38mOhm
Max. drain current:	55A
Max. power loss:	69W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	20V

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	38mOhm
Max. drain current:	55A
Max. power loss:	69W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.