STP6NB50

Symbol Micros: TSTP6NB50

16933

TSTP6NB50

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 5.8A 500V 100W 1.35Ω

Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	5,8A
Max. power loss:	100W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	500V
Max. drain-gate voltage:	500V

All parameters

Manufacturer:: SGS Manufacturer part number: STP6NB50 Case style: TO220  

In stock:

1369 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4237	0,2778	0,1994	0,1742	0,1634

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Packaging:
50/1650 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	5,8A
Max. power loss:	100W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	500V
Max. drain-gate voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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