STP6NK60Z

Symbol Micros: TSTP6NK60Z
Contractor Symbol:
Case : TO220
N-MOSFET 6A 600V 125W 1Ω Replacement: STP6NC60
Parameters
Open channel resistance: 1,2Ohm
Max. drain current: 6A
Max. power loss: 110W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STP6NK60Z RoHS Case style: TO220 Datasheet
In stock:
105 pcs.
Quantity of pcs. 1+ 5+ 50+ 300+ 600+
Net price (EUR) 1,1551 0,7693 0,5952 0,5576 0,5505
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Packaging:
50/300
Manufacturer:: ST Manufacturer part number: STP6NK60Z Case style: TO220  
External warehouse:
8424 pcs.
Quantity of pcs. 250+ (Please wait for the order confirmation)
Net price (EUR) 0,5505
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ST Manufacturer part number: STP6NK60Z Case style: TO220  
External warehouse:
3900 pcs.
Quantity of pcs. 750+ (Please wait for the order confirmation)
Net price (EUR) 0,5505
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ST Manufacturer part number: STP6NK60Z Case style: TO220  
External warehouse:
14600 pcs.
Quantity of pcs. 300+ (Please wait for the order confirmation)
Net price (EUR) 0,5505
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 1,2Ohm
Max. drain current: 6A
Max. power loss: 110W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT