STP6NK60Z

Symbol Micros: TSTP6NK60Z

17037

TSTP6NK60Z

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 6A 600V 125W 1Ω Replacement: STP6NC60

Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	6A
Max. power loss:	110W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ST Manufacturer part number: STP6NK60Z RoHS Case style: TO220 Datasheet

In stock:

105 pcs.

Quantity of pcs.	1+	5+	50+	300+	600+
Net price (EUR)	1,1661	0,7766	0,6009	0,5629	0,5557

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Packaging:
50/300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	6A
Max. power loss:	110W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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