STP9NM60N

Symbol Micros: TSTP9nm60n

109387

TSTP9nm60n

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-channel 600 V, 0.63 Ohm, 6.5 A TO-220 MDmesh(TM) II Power MOSFET

Parameters

Open channel resistance:	745mOhm
Max. drain current:	6,5A
Max. power loss:	70W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ST Manufacturer part number: STP9NM60N RoHS Case style: TO220 Datasheet

In stock:

39 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,1234	0,8241	0,6602	0,5676	0,5344

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	745mOhm
Max. drain current:	6,5A
Max. power loss:	70W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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