STQ1HNK60R

Symbol Micros: TSTQ1HNK60R

80380

TSTQ1HNK60R

Contractor Symbol:

Case : TO92

Datasheet

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N-CHANNEL 600V 8Ohm 1A TO-92 SuperMESH PowerMOSFET

Parameters

Open channel resistance:	8,5Ohm
Max. drain current:	400mA
Max. power loss:	3W
Case:	TO92
Manufacturer:	ST
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

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• Parameters

Open channel resistance:	8,5Ohm
Max. drain current:	400mA
Max. power loss:	3W
Case:	TO92
Manufacturer:	ST
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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