STU10NM60N

Symbol Micros: TSTU10NM60N

132494

TSTU10NM60N

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

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N-MOSFET 10A 600V 70W 0.55Ω

Parameters

Open channel resistance:	550mOhm
Max. drain current:	10A
Max. power loss:	70W
Case:	TO251 (IPAK)
Manufacturer:	ST
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	550mOhm
Max. drain current:	10A
Max. power loss:	70W
Case:	TO251 (IPAK)
Manufacturer:	ST
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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