STW11NK100Z

Symbol Micros: TSTW11NK100Z

51749

TSTW11NK100Z

Contractor Symbol:

Case : TO247

Datasheet

Technical drawing Add to favourites

N-MOSFET 8.3A 1000V 230W 1.38Ω Supersedes 2SK1120

Parameters

Open channel resistance:	1,38Ohm
Max. drain current:	8,3A
Max. power loss:	230W
Case:	TO247
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	1000V
Max. drain-gate voltage:	1000V

All parameters

Manufacturer:: ST Manufacturer part number: STW11NK100Z RoHS Case style: TO247 Datasheet

In stock:

205 pcs.

Quantity of pcs.	1+	5+	30+	150+	300+
Net price (EUR)	2,2301	1,7693	1,5698	1,5010	1,4867

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Packaging:
30/150 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,38Ohm
Max. drain current:	8,3A
Max. power loss:	230W
Case:	TO247
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	1000V
Max. drain-gate voltage:	1000V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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