STW11NM80

Symbol Micros: TSTW11NM80

48012

TSTW11NM80

Contractor Symbol:

Case : TO 3P

Datasheet

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N-MOSFET 11A 800V 150W 0.4Ω

Parameters

Open channel resistance:	400mOhm
Max. drain current:	11A
Max. power loss:	150W
Case:	TO 3P
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ST Manufacturer part number: STW11NM80 RoHS Case style: TO 3P Datasheet

In stock:

49 pcs.

Quantity of pcs.	1+	5+	30+	60+	180+
Net price (EUR)	4,0089	3,2062	2,8357	2,7621	2,6908

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Packaging:
30/60 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	400mOhm
Max. drain current:	11A
Max. power loss:	150W
Case:	TO 3P
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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