STW11NM80

Symbol Micros: TSTW11NM80

48012

TSTW11NM80

Contractor Symbol:

Case : TO 3P

Datasheet

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N-MOSFET 11A 800V 150W 0.4Ω

Parameters

Open channel resistance:	400mOhm
Max. drain current:	11A
Max. power loss:	150W
Case:	TO 3P
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ST Manufacturer part number: STW11NM80 RoHS Case style: TO 3P Datasheet

In stock:

49 pcs.

Quantity of pcs.	1+	5+	30+	60+	180+
Net price (EUR)	3,8902	3,1112	2,7517	2,6803	2,6111

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Packaging:
30/60 Quantity (multiple: 1)

- +

Manufacturer:: ST Manufacturer part number: STW11NM80 Case style: TO 3P  

External warehouse:

2490 pcs.

Quantity of pcs.	90+ (Please wait for the order confirmation)
Net price (EUR)	2,6111

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	400mOhm
Max. drain current:	11A
Max. power loss:	150W
Case:	TO 3P
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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