STW20NM60FD STMicroelectronics

Symbol Micros: TSTW20NM60fd

113258

TSTW20NM60fd

Contractor Symbol:

Case : TO247

Datasheet

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Tranzystor N-MOSFET; 600V; 600V; 30V; 290mOhm; 20A; 214W; -65°C ~ 150°C;

Parameters

Open channel resistance:	290mOhm
Max. drain current:	20A
Max. power loss:	214W
Case:	TO247
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

All parameters

Manufacturer:: ST Manufacturer part number: STW20NM60FD RoHS Case style: TO247 Datasheet

In stock:

60 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,7183	3,3047	3,0541	2,9312	2,8603

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: ST Manufacturer part number: STW20NM60FD Case style: TO247  

External warehouse:

1050 pcs.

Quantity of pcs.	240+ (Please wait for the order confirmation)
Net price (EUR)	2,8603

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	290mOhm
Max. drain current:	20A
Max. power loss:	214W
Case:	TO247
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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