SUD23N06-31-GE3

Symbol Micros: TSUD23N06-31

106943

TSUD23N06-31

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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Single N-Channel MOSFET 60V 0.031 Ohm 100W

Parameters

Open channel resistance:	31mOhm
Max. drain current:	9,1A
Max. power loss:	31,25W
Case:	TO252/3 (DPAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SUD23N06-31-GE3 Case style: TO252/3 (DPAK)  

External warehouse:

1700 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3746

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Vishay Manufacturer part number: SUD23N06-31-GE3 Case style: TO252/3 (DPAK)  

External warehouse:

6000 pcs.

Quantity of pcs.	2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3157

Add to comparison tool Add inquiry (RFQ)

Packaging:
2000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	31mOhm
Max. drain current:	9,1A
Max. power loss:	31,25W
Case:	TO252/3 (DPAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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