SUD50P04-09L-E3

Symbol Micros: TSUD50P04-09L-E3 VBS

367636

TSUD50P04-09L-E3 VBS

Contractor Symbol:

Case : TO252

Datasheet

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Transistor P-Channel MOSFET; -40V; +/-20V; 59mOhm; -50A; 136W; -55°C~175°C;

Parameters

Open channel resistance:	20mOhm
Max. drain current:	-50A
Max. power loss:	136W
Case:	TO252
Manufacturer:	VBsemi
Max. drain-source voltage:	-40V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: SUD50P04-09L-E3-VB RoHS Case style: TO252t/r Datasheet

In stock:

60 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,1851	0,8295	0,7039	0,6447	0,6233

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	20mOhm
Max. drain current:	-50A
Max. power loss:	136W
Case:	TO252
Manufacturer:	VBsemi
Max. drain-source voltage:	-40V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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