TK110E65Z Toshiba Corporation

Symbol Micros: TTK110e65z

529302

TTK110e65z

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Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 650V; 30V; 110mOhm; 24A; 190W; -55°C~150°C; TK110E65Z,S1X(S;

Parameters

Open channel resistance:	110mOhm
Max. drain current:	24A
Max. power loss:	190W
Case:	TO220
Manufacturer:	Toshiba
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	110mOhm
Max. drain current:	24A
Max. power loss:	190W
Case:	TO220
Manufacturer:	Toshiba
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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