TK190E65Z Toshiba Corpotation

Symbol Micros: TTK190e65z

529304

TTK190e65z

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Case : TO220

Datasheet

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PWR-MOSFET N-CHANNEL TK190E65Z,S1X(S

Parameters

Open channel resistance:	190mOhm
Max. drain current:	15A
Max. power loss:	130W
Case:	TO220
Manufacturer:	Toshiba
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	15A
Max. power loss:	130W
Case:	TO220
Manufacturer:	Toshiba
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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