TK1K2A60F,S4X(S

Symbol Micros: TTK1k2a60f
Contractor Symbol:
Case : TO220iso
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N-Channel 600V 6A (Ta) 35W (Tc) Through Hole TO-220SIS
Parameters
Open channel resistance: 1,2Ohm
Max. drain current: 6A
Max. power loss: 35W
Case: TO220iso
Manufacturer: Toshiba
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Toshiba Manufacturer part number: TK1K2A60F,S4X RoHS Case style: TO220iso Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 1,7240 1,3653 1,1617 1,0668 1,0136
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Packaging:
10
Open channel resistance: 1,2Ohm
Max. drain current: 6A
Max. power loss: 35W
Case: TO220iso
Manufacturer: Toshiba
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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