TK1K2A60F,S4X(S

Symbol Micros: TTK1k2a60f
Contractor Symbol:
Case : TO220iso
N-Channel 600V 6A (Ta) 35W (Tc) Through Hole TO-220SIS
Parameters
Open channel resistance: 1,2Ohm
Max. drain current: 6A
Max. power loss: 35W
Case: TO220iso
Manufacturer: TOSHIBA
Max. drain-source voltage: 600V
Max. gate-source Voltage: 30V
         
 
Item available on request
Open channel resistance: 1,2Ohm
Max. drain current: 6A
Max. power loss: 35W
Case: TO220iso
Manufacturer: TOSHIBA
Max. drain-source voltage: 600V
Max. gate-source Voltage: 30V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT