TK1K2A60F,S4X(S

Symbol Micros: TTK1k2a60f

282931

TTK1k2a60f

Contractor Symbol:

Case : TO220iso

Datasheet

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N-Channel 600V 6A (Ta) 35W (Tc) Through Hole TO-220SIS

Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	6A
Max. power loss:	35W
Case:	TO220iso
Manufacturer:	TOSHIBA
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Toshiba Manufacturer part number: TK1K2A60F,S4X RoHS Case style: TO220iso Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,5835	1,2550	1,0683	0,9808	0,9312

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	6A
Max. power loss:	35W
Case:	TO220iso
Manufacturer:	TOSHIBA
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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