TK1K9A60F,S4X(S

Symbol Micros: TTK1k9a60f

282932

TTK1k9a60f

Contractor Symbol:

Case : TO220iso

Datasheet

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N-Channel 600V 3.7A (Ta) 30W (Tc) Through Hole TO-220SIS TK1K9A60F,S4X(S

Parameters

Open channel resistance:	1,9Ohm
Max. drain current:	3,7A
Max. power loss:	30W
Case:	TO220iso
Manufacturer:	TOSHIBA
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V

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• Parameters

Open channel resistance:	1,9Ohm
Max. drain current:	3,7A
Max. power loss:	30W
Case:	TO220iso
Manufacturer:	TOSHIBA
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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