TK6A65D(STA4,Q,M)

Symbol Micros: TTK6a65d

215407

TTK6a65d

Contractor Symbol:

Case : TO220iso

Datasheet

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Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS

Parameters

Open channel resistance:	1,11Ohm
Max. drain current:	6A
Max. power loss:	45W
Case:	TO220iso
Manufacturer:	Toshiba
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Toshiba Manufacturer part number: TK6A65D(STA4,Q,M) Case style: TO220iso  

External warehouse:

30360 pcs.

Quantity of pcs.	700+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5100

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,11Ohm
Max. drain current:	6A
Max. power loss:	45W
Case:	TO220iso
Manufacturer:	Toshiba
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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