TK6A65D(STA4,Q,M)

Symbol Micros: TTK6a65d

215407

TTK6a65d

Contractor Symbol:

Case : TO220iso

Datasheet

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Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS

Parameters

Open channel resistance:	1,11Ohm
Max. drain current:	6A
Max. power loss:	45W
Case:	TO220iso
Manufacturer:	Toshiba
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,11Ohm
Max. drain current:	6A
Max. power loss:	45W
Case:	TO220iso
Manufacturer:	Toshiba
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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