TK8P60W,RVQ(S

Symbol Micros: TTK8p60w

215441

TTK8p60w

Contractor Symbol:

Case : DPAK

Datasheet

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Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK

Parameters

Open channel resistance:	560mOhm
Max. drain current:	8A
Max. power loss:	80W
Case:	DPAK
Manufacturer:	Toshiba
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	560mOhm
Max. drain current:	8A
Max. power loss:	80W
Case:	DPAK
Manufacturer:	Toshiba
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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