TP65H150G4PS

Symbol Micros: TTP65H150G4PS

536675

TTP65H150G4PS

Contractor Symbol:

Case : TO220

Datasheet

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RENESAS Gallium Nitride (GaN) Transistor, 650 V, 16 A, 0.18 ohm, 8 nC, TO-220, Through Hole

Parameters

Open channel resistance:	180mOhm
Max. drain current:	16A
Max. power loss:	83W
Case:	TO220
Manufacturer:	Renesas
Max. drain-source voltage:	650V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	180mOhm
Max. drain current:	16A
Max. power loss:	83W
Case:	TO220
Manufacturer:	Renesas
Max. drain-source voltage:	650V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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