TPHR9003NL,L1Q Toshiba

Symbol Micros: TTPHR9003nl

118303

TTPHR9003nl

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

N-MOSFET 30V 60A 1.6W 0.9mΩ

Parameters

Open channel resistance:	1,4mOhm
Max. drain current:	60A
Max. power loss:	78W
Case:	SOP08
Manufacturer:	TOSHIBA
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Toshiba Manufacturer part number: TPHR9003NL,L1Q(M RoHS Case style: SOP08t/r Datasheet

In stock:

80 pcs.

Quantity of pcs.	1+	5+	20+	100+	300+
Net price (EUR)	1,7772	1,3182	1,1534	1,0710	1,0451

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,4mOhm
Max. drain current:	60A
Max. power loss:	78W
Case:	SOP08
Manufacturer:	TOSHIBA
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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