TPN11006NL

Symbol Micros: TTPN11006nl

355276

TTPN11006nl

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Case : PowerTDFN8(5x6)

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Trans MOSFET N-CH Si 60V 37A 8-Pin TSON EP Advance T/R TPN11006NL,LQ(S

Parameters

Open channel resistance:	17mOhm
Max. drain current:	37A
Max. power loss:	30W
Case:	PowerTDFN8(5x6)
Manufacturer:	TOSHIBA
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	17mOhm
Max. drain current:	37A
Max. power loss:	30W
Case:	PowerTDFN8(5x6)
Manufacturer:	TOSHIBA
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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