TSM120N06LCR

Symbol Micros: TTSM120n06lcr

219252

TTSM120n06lcr

Contractor Symbol:

Case : PDFN56

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 15mOhm; 54A; 69W; -55°C ~ 150°C; TSM120N06LCR RLG

Parameters

Open channel resistance:	15mOhm
Max. drain current:	54A
Max. power loss:	69W
Case:	PDFN56
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM120N06LCR RLG RoHS Case style: PDFN56 Datasheet

In stock:

50 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6226	0,3947	0,3101	0,2819	0,2702

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM120N06LCR RLG Case style: PDFN56  

External warehouse:

3350 pcs.

Quantity of pcs.	25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4433

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Packaging:
25

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	15mOhm
Max. drain current:	54A
Max. power loss:	69W
Case:	PDFN56
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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